Hydrogen-induced 3×1 phase of the Si-rich 3C-SiC(001) surface

摘要

A single-domain 3×1 phase induced by hydrogen adsorption on a Si-rich 3C-SiC(001)3×2 surface is investigated by photoemission using synchrotron radiation. Three surface components of the Si 2p core level are identified for the 3×1-H phase, which resemble those of the 3×2 surface. A H-Si bonding state is observed by angle-resolved valence-band photoemission. These results are consistent with the recent assignments of the Si 2p surface components and the valence band spectra of the 3×2 surface, based on the 3×2 structure model with 2/3 ML Si addimers. A straightforward 3×1-H structure model is introduced featuring Si dimer-bond breaking and dangling-bond saturation.